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| AOP607 Complementary Enhancement Mode Field Effect Transistor General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications). AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56m (VGS=10V) < 105m (VGS =-10V) < 77m (VGS=4.5V) < 135m (VGS =-4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 20 -3.4 -2.7 -20 2.5 1.6 -55 to 150 Typ 37 74 28 35 73 32 Units V V A VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD 20 4.7 3.8 20 2.5 1.6 -55 to 150 Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch W C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Max Units 50 C/W 90 C/W 40 C/W 50 90 40 C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOP607 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=4.7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance VDS=5V, ID=4.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1.5 20 42 75 54 11 0.78 1 4 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 60 25 1.65 8.5 VGS=10V, VDS=30V, ID=4.7A 4.3 1.6 2.2 5.1 VGS=10V, VDS=30V, RL=6, RGEN=3 IF=4.7A, dI/dt=100A/s 2.6 15.9 2 25.1 28.7 35 2 10.5 5.5 540 77 56 2.3 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4.7A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 10.0V 5.0V 15 4.5V ID (A) 10 4.0V 5 VGS=3.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance VGS=10V 1.8 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=3.0A ID=4.7A ID(A) 10 125C VDS=5V 15 5 25C 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 VGS=10V VGS=4.5V 1.0E+01 160 ID=4.7A 140 1.0E-01 RDS(ON) (m) 125C 100 80 60 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 120 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C 1.0E+00 Alpha & Omega Semiconductor, Ltd. AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID= 4.7A Capacitance (pF) 600 Ciss 400 Coss Crss 800 200 0 0 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10.0 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 1s 100s 1ms 10s 40 TJ(Max)=150C TA=25C 30 Power (W) ID (Amps) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOP607 P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-3.4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-2.7A Forward Transconductance VDS=-5V, ID=-3.4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.5 -20 80 130 102 10 -0.77 -1 -4 930 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 85 35 7.2 16 VGS=-10V, VDS=-30V, I D=-3.4A 8 2.5 3.2 8 VGS=-10V, VDS=-30V, RL=8.8, RGEN=3 IF=-3.4A, dI/dt=100A/s IF=-3.4A, dI/dt=100A/s 3.8 31.5 7.5 27 32 35 9 20 10 1120 135 105 -2.1 Min -60 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the 10s thermal resistance rating. given application depends on the user's specific board design. The current rating is based on the t t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev1:Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 -10V 15 -ID (A) -4.5V -4.0V 20 10 -3.5V 5 -ID(A) 15 10 VGS=-3.0V 5 25C 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance VGS=-4.5V 1.8 1.6 1.4 1.2 1 0.8 70 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (m) 140 120 100 80 60 2 3 4 5 6 7 8 9 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-3.4A 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-3A ID=-3.4A VGS=-10V 125C 30 25 VDS=-5V 130 120 RDS(ON) (m) 110 100 90 80 VGS=-10V 125C Alpha & Omega Semiconductor, Ltd. AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) VDS=-30V ID=-3.4A Capacitance (pF) Ciss 1000 1500 6 4 500 Coss Crss 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 10 20 30 40 50 60 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 10s Power (W) 1ms 10ms 100s 40 TJ(Max)=150C TA=25C 30 -ID (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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